Active matrix substrate and method for inspecting the same

ABSTRACT

An active matrix substrate includes a pixel region including a plurality of pixels over a substrate and a frame region outside the pixel region. In the plurality of pixels, a plurality of photoelectric conversion elements are provided. In the frame region, an antistatic hole is provided. The pixel region and a portion of the frame region are covered with an insulating film, and the antistatic hole is bored through the insulating film. An antistatic wire is provided in the frame region so as to surround the pixel region, and has a surface exposed in the antistatic hole.

BACKGROUND 1. Field

The present disclosure relates to an active matrix substrate and amethod for inspecting the same.

2. Description of the Related Art

An active matrix substrate for use in an imaging panel that imagesX-rays includes photoelectric conversion elements for each of aplurality of pixels formed on a substrate. For example, JapaneseUnexamined Patent Application Publication No. 2006-032385 disposes asolid-state imaging apparatus that reduces dark currents. Thissolid-state imaging apparatus has an n-type well region formed in ap-type semiconductor substrate and a pixel array region havingphotodiodes two-dimensionally arrayed in the n-type well region. Formedoutside the pixel array region are a plurality of well contacts to whicha reference voltage is supplied and a dark current suction regionprovided so as to surround the periphery of the pixel array region. Theplurality of well contacts are p-type well contacts, and are decentrallydisposed so as to surround the dark current suction region. Although thep-type well contacts prevent a biased distribution of well potentialwithin the pixel array region, dark currents are diffused from thep-type well contacts. Therefore, the dark current suction region isprovided so as to surround the periphery of the pixel array region, andan inversely-biased voltage is applied between the pixel array regionand the p-type well contacts. In this way, the dark currents diffusedfrom the p-type well contacts into the photodiodes are absorbed by thedark current suction region.

Incidentally, in the process of manufacturing the active matrixsubstrate, contamination on the molecular level adheres to a surface ofthe active matrix substrate. Therefore, a process of cleaning thesurface of the active matrix substrate with cleaning water is performed.Alternatively, in a substrate cutting step after completion of theactive matrix substrate manufacturing step, a process of cleaning withcleaning water is performed for the removal of contamination and glasscullet on the molecular level. In the step of cleaning the active matrixsubstrate, after the cleaning water has been ejected onto the activematrix substrate, the active matrix substrate is dried with an air knifewhile being transported. When the active matrix substrate passes throughthe air knife, the cleaning water on the active matrix substrate ispushed away in a direction opposite a direction of conveyance of theactive matrix substrate. In a case where the active matrix substrate ischarged with static electricity or the like, the cleaning water on theactive matrix substrate is charged, too. Therefore, the electric chargeof the cleaning water concentrates in a region on the active matrixsubstrate where the cleaning water pushed away by the air knife easilyaccumulates. Pixels provided in the region where the electric charge ofthe cleaning water concentrates tend to increase in dark current of thephotoelectric conversion elements.

SUMMARY

According to an aspect of the disclosure, there is provided an activematrix substrate including: a substrate; a pixel region including aplurality of pixels formed over the substrate; a plurality ofphotoelectric conversion elements provided in the plurality of pixels;an antistatic wire provided in a frame region outside the pixel regionso as to surround the pixel region; an insulating film covering aportion of the frame region and the pixel region; and an antistatic holebored through the insulating film in the frame region, wherein theantistatic wire has a surface exposed in the antistatic hole.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view schematically showing a configuration of animaging panel according to a first embodiment;

FIG. 2 is an equivalent circuit diagram of a pixel in the imaging panelshown in FIG. 1;

FIG. 3 is a schematic view showing a configuration of protection circuitsections shown in FIG. 1;

FIG. 4 is a schematic view showing an example of a cleaning processapparatus that cleans the imaging panel;

FIG. 5 illustrates schematic cross-sectional views of regions in theimaging panel where an antistatic hole and a pixel are provided;

FIG. 6A is a cross-sectional view explaining a step of manufacturing animaging panel, and is a cross-sectional view showing a step of forming aTFT and an antistatic wire;

FIG. 6B is a cross-sectional view showing a step of forming an inorganicinsulating film covering the TFT and the antistatic wire;

FIG. 6C is a cross-sectional view showing a step of forming aplanarizing film after the step of FIG. 6B;

FIG. 6D is a cross-sectional view showing a step of forming a low-leveldata line, a low-level lower electrode layer, and an antistaticlow-level wire after the step of FIG. 6C;

FIG. 6E is a cross-sectional view showing a step of forming an inorganicinsulating film after the step of FIG. 6D;

FIG. 6F is a cross-sectional view showing a step of forming an openingof the inorganic insulating film over the low-level lower electrodeshown in FIG. 6E;

FIG. 6G is a cross-sectional view showing a step of forming a high-levellower electrode, a photoelectric conversion layer, an upper electrode,and an inorganic insulating film after the step of FIG. 6F;

FIG. 6H is a cross-sectional view showing a step of forming an openingover the low-level data line and the antistatic low-level wire shown inFIG. 6G;

FIG. 6I is a cross-sectional view showing a step of forming aplanarizing film after the step of FIG. 6H;

FIG. 6J is a cross-sectional view showing a step of forming a high-leveldata line, a bias wire, and an antistatic high-level wire after the stepof FIG. 6I;

FIG. 6K is a cross-sectional view showing a step of forming an inorganicinsulating film and a planarizing film in this order after the step ofFIG. 6J;

FIG. 6L is a cross-sectional view showing a step of forming an inorganicinsulating film after the step of FIG. 6K;

FIG. 7 is a plan view schematically showing a configuration of animaging panel according to a second embodiment;

FIG. 8A is a plan view schematically showing a configuration of aportion of a second data protection circuit section shown in FIG. 7;

FIG. 8B is a cross-sectional view taken along line VIIIB-VIIIB shown inFIG. 8A;

FIG. 9 is a plan view schematically showing a configuration of animaging panel according to a third embodiment;

FIG. 10A illustrates schematic cross-sectional views taken along lineA-A, line B-B, and line C-C, respectively, shown in FIG. 9;

FIG. 10B is a schematic cross-sectional view of an imaging paneldiffering in configuration from that of FIG. 10A;

FIG. 11A is a plan view schematically showing a configuration of animaging panel according to Modification (1);

FIG. 11B is a plan view schematically showing the configuration of theimaging panel according to Modification (1), and is a plan view showinga configuration differing from that of FIG. 11A;

FIG. 12 is a schematic cross-sectional view of an imaging panelaccording to Modification (2); and

FIG. 13 is a schematic cross-sectional view of an imaging panelaccording to Modification (4).

DESCRIPTION OF THE EMBODIMENTS

In the following, embodiments of the present disclosure are described indetail with reference to the drawings. Components that are the same asor equivalent to each other throughout the drawings are given the samereference signs and are not repeatedly described.

First Embodiment

An active matrix substrate of the present embodiment is used, forexample, in an imaging panel for imaging X-rays. The present embodimentis described by taking, as an example, an imaging panel that is to beprovided with a scintillator for converting X-rays to fluorescence(scintillation light).

Configuration

FIG. 1 is a plan view schematically showing a configuration of animaging panel according to the present embodiment. As shown in FIG. 1,the imaging panel 1 includes a plurality of data lines 10 and aplurality of gate lines 11 that intersect with the plurality of datalines 10, and includes an imaging region Ra composed of regions(hereinafter referred to as “pixels”) surrounded by the data lines 10and the gate lines 11.

Inside the imaging region Ra, a bias wire 13 is disposed so as tosurround the imaging region Ra. Further, although not illustrated inthis drawing, each pixel is provided with a bias wire (hereinafterreferred to as “branch bias wire”) drawn out from the bias wire 13.

In a frame region Rb outside the imaging region Ra, an antistatic hole14, an antistatic wire 15, and protection circuit sections 16 and 17 areprovided.

The antistatic hole 14 is provided in a corner of the imaging panel 1.The antistatic hole 14 is depressed from a surface of the imaging panel1 toward a side that a negative direction parallel to a Z axis points.

The antistatic wire 15 is provided along an outer shape of the imagingpanel 1. Further, the antistatic wire 15 is disposed so as to overlapthe antistatic hole 14 in plan view in a place where the antistatic hole14 is provided.

The protection circuit section 16 is provided for the plurality of datalines 10, and includes a plurality of data terminals and a plurality ofnon-linear elements that will both be described later.

The protection circuit section 17 is provided for the plurality of gatelines 11, and includes a plurality of gate terminals and a plurality ofnon-linear elements that will both be described later.

Next, a configuration of a pixel in the imaging region Ra is described.FIG. 2 is an equivalent circuit diagram showing a configuration of apixel. As shown in FIG. 2, the pixel P includes a TFT (thin-filmtransistor) 21 and a photoelectric conversion element (photodiode) 22.

The photoelectric conversion element 22 includes a PIN photodiode and apair of electrodes (namely, a cathode electrode and an anode electrode).The TFT 21 has its source connected to a data line 10, and has its drainconnected to the cathode electrode of the photoelectric conversionelement 22. The photoelectric conversion element 22 has its anodeelectrode connected via a contact hole to a branch bias line 13 a. Thecontact hole is provided in an insulating film (not illustrated). Thebranch bias wire 13 a branches off from the aforementioned bias wire 13.

In this example, the branch bias wire 13 a is constituted by a principalwire disposed parallel to the data line 10 and a secondary wirebranching off from the principal wire, and the photoelectric conversionelement 22 has its anode electrode connected to the secondary wire.

Although not illustrated in FIG. 1 or 2, a drive circuit that scans thegate lines 11 and a readout circuit that reads out, from the data lines10, electric charges to which scintillation light has been converted bythe photoelectric conversion elements 22 are connected to the imagingpanel 1. The readout circuit applies a predetermined voltage to a dataline 10. When a TFT 21 connected to a gate line scanned by the drivecircuit is brought into an on state, an electric signal corresponding toan electric charge converted by a pixel provided with the TFT 21 isoutputted via the data line 10 to the readout circuit.

A configuration of the protection circuit sections 16 and 17 isdescribed here in concrete terms. FIG. 3 is a schematic view showing aconfiguration of the protection circuit sections 16 and 17.

As shown in FIG. 3, the protection circuit section 16 includes a dataterminal 161 and a non-linear element 162 both provided for each of thedata lines 10. A plurality of the data terminals 161 are arrayedsubstantially parallel to a direction in which the data lines 10 arearranged.

The data terminal 161 is connected to both a data line 10 extended tothe frame region Rb and the non-linear element 162.

The non-linear element 162 is constituted by a diode, a TFT, or thelike. The non-linear element 162 is connected between the antistaticwire 15 and the data terminal 161 so that a direction from theantistatic wire 15 toward the data terminal 161 is a forward direction.

Further, as shown in FIG. 3, the protection circuit section 17 includesa gate terminal 171 and a non-linear element 172 both provided for eachof the gate lines 11. A plurality of the gate terminals 171 are arrayedsubstantially parallel to a direction in which the gate lines 11 arearranged.

The gate terminal 171 is connected to both a gate line 11 extended tothe frame region Rb and the non-linear element 172.

The non-linear element 172 is disposed so that a direction from the gateterminal 171 connected to it toward the non-linear element 172 is aforward direction. Further, the non-linear element 172 has its anodeconnected to the cathode of another non-linear element 172 that isadjacent to the non-linear element 172. Note, however, that of aplurality of the non-linear elements 172, non-linear elements 172provided at both ends have their cathodes in a floating state.

In the manufacturing process, the imaging panel 1 is subjected toinspection (imaging inspection) as to whether it can appropriatelyperform imaging. In the imaging inspection, a scanning voltage of, forexample, approximately +20 V is applied to the gate lines 11 via thegate terminals 171 while the gate lines 11 are being scanned, and anon-scanning voltage of, for example, approximately −10 V is applied tothe gate lines 11 via the gate terminals 171 while the gate lines 11 arenot being scanned. Further, a data voltage of, for example,approximately 1 V is applied to the data lines 10 via the data terminals161. Moreover, a bias voltage of, for example, approximately −6 V isapplied to the bias wire 13. In this state, the non-linear elements 162and the non-linear elements 172 are in an inversely-biased state. Whennegative static electricity flows into the data lines 10, the non-linearelements 162 are brought into a forward bias state, so that the staticelectricity flows through the antistatic wire 15. Further, in a casewhere negative static electricity that is smaller than the non-scanningvoltage flows into a gate line 11, a non-linear element 172 provided fora gate line 11 adjacent to the gate line 11 becomes forwardly biased, sothat the static electricity is scattered across the gate lines 11.

Further, in the manufacturing process, a process of cleaning the surfaceof the imaging panel 1 is performed. FIG. 4 is a schematic view showingan example of a cleaning process apparatus. A step of cleaning theimaging panel 1 is described below with reference to FIG. 4.

The cleaning process apparatus 200 executes a step of aligning theimaging panel 1, a cleaning water ejecting step, and a drying step insequence. The cleaning process apparatus 200 conveys the imaging panel 1by driving conveyor rollers 210 provided from a conveyor inlet 200 a toa conveyor outlet 200 b. In the aligning step, the position of theimaging panel 1 is adjusted by an alignment jig 212. The imaging panel1, whose position has been adjusted, is sent to the cleaning waterejecting step, in which cleaning water is ejected from a shower nozzle214 provided on an upper surface of the cleaning process apparatus 200.After the cleaning water has been ejected, the imaging panel 1 is sentto the drying step, in which the cleaning water having adhered to theimaging panel 1 is drained by air knives 216 provided over the conveyorrollers 210. After the drying by the air knives 216, the imaging panel 1is sent to the conveyor outlet 200 b.

As shown in FIG. 4, the air knives 216 are each configured by providinga rectangular haft with a fan. The rectangular haft has a longitudinaldirection orthogonal to a direction of conveyance of the imaging panel1. One end of 216 f (hereinafter referred to as “first end”) of each ofthe air knives 216 in the longitudinal direction is disposedsubstantially horizontal to surfaces of the conveyor rollers 210, theother end 216 s (hereinafter referred to as “second end”) of each of theair knives 216 in the longitudinal direction is disposed in a higherposition than the first end 216 f. Therefore, the first ends 216 f ofthe air knives 216 press the surface of the imaging panel 1 with astronger force than the second ends 216 s, so that the cleaning waterover the imaging panel 1 pushed out to a corner (indicated by a dottedframe C) of the imaging panel 1 that faces the first ends 216 f. Whenthe imaging panel 1 is charged with static electricity during thecleaning, the cleaning water having touched the imaging panel 1 becomescharged, too, so that the electric charge of the cleaning water adheresbiasedly to a region where the cleaning water thus pushed awayaccumulates.

As shown in FIG. 1, the antistatic hole 14 is provided in a corner ofthe imaging panel 1. When the imaging panel 1 is conveyed, the imagingpanel 1 is conveyed so that the antistatic hole 14 is positionedbackward in the direction of conveyance and toward the first ends 216 fof the air knives 216. Therefore, the cleaning water pushed out by theair knives 216 easily flows into the antistatic hole 14.

Cross-section structures of regions in the imaging panel 1 where a pixelP and the antistatic hole 14 are provided are described here in concreteterms. FIG. 5 illustrates schematic cross-sectional views of a region(region Rb_c) in the imaging panel 1 where the antistatic hole 14 isprovided and a pixel P.

As shown in FIG. 5, a gate electrode 21 a is provided in a region over asubstrate 100 such as a glass substrate where the pixel P is formed. Thegate electrode 21 a has, for example, a laminated structure in which ametal film composed of tantalum nitride (TaN) and a metal film composedof tungsten (W) are stacked in this order from the bottom. In thisexample, the gate electrode 21 a has film thicknesses of approximately30 nm and approximately 300 nm in this order from the lower metal film.Note, however, that the gate electrode 21 a is not limited to thesematerials or film thicknesses.

Further, a gate insulating film 101 is provided in the pixel P and theregion Rb_c so as to cover the gate electrode 21 a in the pixel P. Thegate insulating film 101 has, for example, a laminated structure inwhich an inorganic insulating film composed of silicon nitride (SiNx)and an inorganic insulating film composed of silicon oxide (SiO₂) arestacked in this order from the bottom. In this example, the gateinsulating film 101 has film thicknesses of approximately 325 nm andapproximately 10 nm in this order from the lower inorganic insulatingfilm. Note, however, that the gate insulating film 101 is not limited tothese materials or film thicknesses.

In the pixel P, an oxide semiconductor layer 21 b is provided over thegate insulating film 101. The oxide semiconductor layer 21 b isconstituted by an oxide semiconductor layer containing indium (In),gallium (Ga), zinc (Zn), and oxygen (O₂) at predetermined ratios. Theoxide semiconductor layer 21 b has a film thickness of approximately 100nm. The oxide semiconductor layer 21 b is not limited to these materialsor this film thickness.

Further, in the pixel P, a source electrode 21 c and a drain electrode21 d both covering portions of the oxide semiconductor layer 21 b areprovided over the gate insulating film 101. Further, in the region Rb_c,the antistatic wire 15 is provided over the gate insulating film 101.The antistatic wire 15 is an example of a first wiring layer of anantistatic wire according to the present embodiment.

The source electrode 21 c, the drain electrode 21 d, and the antistaticwire 15 are constituted by a layer hereinafter referred to as“source-drain layer”. In this example, the source-drain layer has, forexample, a laminated structure in which metal films of titanium (Ti),aluminum (Al), and titanium (Ti) are stacked in this order from thebottom. The metal films of the source-drain layer SD has filmthicknesses of approximately 30 nm, approximately 400 nm, andapproximately 50 nm in this order from the lower metal film. Thedrain-source layer is not limited to these materials or filmthicknesses.

In the pixel P and the region Rb_c, an inorganic insulating film 102 isprovided over the source-drain layer, and a planarizing film 103 isprovided over the inorganic insulating film 102. In the pixel P, contactholes CH1 and CH2 bored through the inorganic insulating film 102 andthe planarizing film 103 are formed in such places as to overlap thesource electrode 21 c and the drain electrode 21 d, respectively, inplan view. Further, in the region Rb_c, a contact hole CH3 bored throughthe inorganic insulating film 102 and the planarizing film 103 is formedin such a place as to overlap the antistatic wire 15 in plan view.

In this example, the inorganic insulating film 102 has, for example, alaminated structure in which an inorganic insulating film composed ofsilicon oxide (SiO₂) and an inorganic insulating film composed ofsilicon nitride (SiNx) are stacked in this order from the bottom. Theinorganic insulating film 102 has film thicknesses of approximately 500nm and approximately 150 nm in this order from the lower inorganicinsulating film. The inorganic insulating film 102 is not limited tothese materials or film thicknesses.

Further, in this example, the planarizing film 103 is constituted by aphotosensitive acrylic resin, and the planarizing film 103 has a filmthickness of approximately 2.5 μm. The planarizing film 103 is notlimited to this material or film thickness.

In the pixel P, a low-level lower electrode 221 a and a low-level dataline 221 b are provided over the planarizing film 103. The low-levellower electrode 221 a is a portion of the cathode electrode of thephotodiode 22. The low-level lower electrode 221 a is connected to thedrain electrode 21 d via the contact hole CH2. The low-level data line221 b is connected to the source electrode 21 c via the contact holeCH1. Further, in the region Rb_c, an antistatic low-level wire 221 c isprovided over the planarizing film 103. The antistatic low-level wire221 c is connected to the antistatic wire 15 via the contact hole CH3.The low-level lower electrode 221 a, the low-level data line 221 b, andthe antistatic low-level wire 221 c are constituted by a layerhereinafter referred to as “cathode electrode layer”.

The cathode electrode layer has, for example, a laminated structure inwhich metal films of titanium (Ti), aluminum (Al), and titanium (Ti) arestacked in this order from the bottom. The cathode electrode layer hasfilm thicknesses of approximately 30 nm, approximately 300 nm, andapproximately 100 nm in this order from the lower metal film. Thecathode electrode layer is not limited to these materials or filmthicknesses.

In the pixel P and the region Rb_c, an inorganic insulating film 104covering a portion of the cathode electrode layer is provided over theplanarizing film 103.

In the pixel P, a high-level lower electrode 222 is provided over thelow-level lower electrode 221 a. The high-level lower electrode 222 isconnected to the drain electrode 21 d via the low-level lower electrode221 a. In the present embodiment, the high-level lower electrode 222 andthe low-level lower electrode 221 a function as the cathode electrode ofthe photodiode 22. The high-level lower electrode 222 is constituted bya metal film composed, for example, of titanium (Ti), and has a filmthickness of approximately 30 nm. The high-level lower electrode 222 isnot limited to this material or film thickness.

Further, in the pixel P, an n-type amorphous semiconductor layer 223 n,an intrinsic amorphous semiconductor layer 223 i, and a p-type amorphoussemiconductor layer 223 p are stacked in this order as a photoelectricconversion layer of the photodiode 22. The n-type amorphoussemiconductor layer 223 n is composed of amorphous silicon doped with ann-type impurity (e.g. phosphorus). The intrinsic amorphous semiconductorlayer 223 i is composed of intrinsic amorphous silicon. The p-typeamorphous semiconductor layer 223 p is composed of amorphous silicondoped with a p-type impurity (e.g. boron). The n-type amorphoussemiconductor layer 223 n, the intrinsic amorphous semiconductor layer223 i, and the p-type amorphous semiconductor layer 223 p have filmthicknesses of approximately 10 nm, approximately 1200 nm, andapproximately 10 nm, respectively. The n-type amorphous semiconductorlayer 223 n, the intrinsic amorphous semiconductor layer 223 i, and thep-type amorphous semiconductor layer 223 p are not limited to thesematerials or film thicknesses.

In the pixel P, an upper electrode 224 is provided as an node electrodeover the p-type amorphous semiconductor layer 223 p. The upper electrode224 is constituted by a transparent conducting film composed of, forexample, of indium tin oxide (ITO), and the upper electrode 224 has afilm thickness of approximately 60 nm. The upper electrode 224 is notlimited to this material or film thickness.

In the pixel P, an inorganic insulating film 105 is provided over theinorganic insulating film 104 and the photodiode 22, and a planarizingfilm 106 is provided over the inorganic insulating film 105. Further, inthe region Rb_c, the inorganic insulating film 105 is provided over theinorganic insulating film 104, and the planarizing film 106 is providedover the inorganic insulating film 105.

Contact holes CH12, CH22, and CH23 are provided in such places as tooverlap the low-level data line 221 b, the upper electrode 224, and theantistatic low-level wire 221 c, respectively, in plan view. The contactholes CH12 and CH22 are each bored through the inorganic insulatingfilms 104 and 105 and the planarizing film 106. The contact hole CH23 isbored through the inorganic insulating film 105 and the planarizing film106.

The inorganic insulating film 105 is constituted by an inorganicinsulating film composed, for example, of silicon nitride (SiNx), andthe inorganic insulating film 105 has a film thickness of approximately300 nm. The inorganic insulating film 105 is not limited to thismaterial or film thickness. The planarizing film 106 is constituted, forexample, by a photosensitive acrylic resin, and the planarizing film 106has a film thickness of approximately 2.5 μm. The planarizing film 106is not limited to this material or film thickness.

In the pixel P and the region Rb_c, a high-level data line 131, the biaswire 13, and an antistatic high-level wire 132 are provided over theplanarizing film 106. The high-level data line 131, the bias wire 13,and the antistatic high-level wire 132 are constituted by a layerhereinafter referred to as “bias wire layer”.

The high-level data 131 and the low-level data line 221 b are combinedto form a data line 10. The high-level data line 131 is connected to thelow-level data line 221 b via the contact hole CH12. Further, theantistatic high-level wire 132 is connected to the antistatic low-levelwire 221 c via the contact hole CH23. The antistatic high-level wire 132and the antistatic low-level wire 221 c are an example of a secondwiring layer of the antistatic wire according to the present embodiment.

The bias wire layer has, for example, a laminated structure in which alaminated metal film in which metal films of titanium (Ti), aluminum(Al), and titanium (Ti) are stacked and a transparent conducting filmcomposed of indium tin oxide (ITO) are stacked in this order from thebottom. The laminated metal film and the transparent conducting film ofthe bias wire layer have film thicknesses of approximately 60 nm,approximately 600 nm, approximately 50 nm, and approximately 100 nm inthis order from the bottom. The bias wire layer is not limited to thesematerials or film thicknesses.

In the pixel P and the region Rb_c, an inorganic insulating film 107 isprovided over the planarizing film 106, and a planarizing film 108 isprovided over the inorganic insulating film 107. Further, an inorganicinsulating film 109 is provided over the planarizing film 108. In theregion Rb_c, the antistatic hole 14, bored through the inorganicinsulating film 107, the planarizing film 108, and the inorganicinsulating film 109, is provided in such a place as to overlap theantistatic high-level wire 132 in plan view. The antistatic high-levelwire 132 has a surface exposed inside the antistatic hole 14.

In this example, the inorganic insulating film 107 is constituted by aninorganic insulating film composed, for example, of silicon nitride(SiNx), and the inorganic insulating film 107 has a film thickness ofapproximately 400 nm. In this example, the planarizing film 108 isconstituted, for example, by a photosensitive acrylic resin, and theplanarizing film 108 has a film thickness of approximately 3.0 μm.Further, in this example, the inorganic insulating film 109 isconstituted by an inorganic insulating film composed, for example, ofsilicon nitride (SiNx), and the inorganic insulating film 109 has a filmthickness of approximately 150 nm. The inorganic insulating film 107,the planarizing film 108, and the inorganic insulating film 109 are notlimited to these materials or film thicknesses, respectively.

In the step of cleaning the imaging panel 1, when positively-chargedcleaning water touches the antistatic hole 14 and the electric chargeenters the antistatic hole 14, the electric charge of the cleaning wateris canceled out by electrons from the antistatic high-level wire 132,the antistatic low-level wire 221 c, and the antistatic wire 15.Further, when negatively-charged cleaning water touches the antistatichole 14 and the electric charge enters the antistatic hole 14, theelectric charge of the cleaning water diffuses into the antistatichigh-level wire 132, the antistatic low-level wire 221 c, and theantistatic wire 15.

Further, the antistatic wire 15 is set to a ground potential (0 V) as apredetermined reference voltage after the step of cleaning the imagingpanel 1. In this way, the antistatic high-level wire 132, the antistaticlow-level wire 221 c, and the antistatic wire 15, which have beencharged by the electric charge of the cleaning water, are subjected tostatic removal. As a result, the electric charge of the cleaning wateris not biased toward a corner of the imaging panel 1, and increases indark current of photodiodes 261 in pixels around a corner of the imagingpanel 1 can be prevented.

Next, a method for manufacturing the imaging panel 1 is described. FIGS.6A to 6H are cross-sectional views showing steps of fabricating thepixel 10 and the region Rb_c of FIG. 5.

First, the TFT 21 is formed in a region of the pixel P over thesubstrate 100, and the antistatic wire 15 is formed in the region Rb_c(see FIG. 6A).

Specifically, a metal film composed of tantalum nitride (TaN) and ametal film composed of tungsten (W) are formed in this order, forexample, by a sputtering method over the substrate 100. Then, the metalfilms thus stacked are patterned by performing a photolithography methodand dry etching. In this way, the gate electrode 21 a of the TFT 21 isformed in the pixel P.

After that, a film of silicon nitride (SiNx) and a film of silicon oxide(SiO₂) are formed as inorganic insulating films in this order, forexample, by a CVD (chemical vapor deposition) method. In this way, agate insulating film 101 covering the gate electrode 21 a is formed inthe pixel P and the region Rb_c.

Next, a film of an oxide semiconductor containing indium (In), gallium(Ga), zinc (Zn), and oxygen (O₂) at predetermined ratios is formed, forexample, by a sputtering method. Then, the oxide semiconductor ispatterned by performing a photolithography method and dry etching. Inthis way, the semiconductor layer 21 b overlapping the gate electrode 21a in plan view is formed in the pixel P.

After that, metal films of titanium (Ti), aluminum (Al), and titanium(Ti) are stacked in this order, for example, by a sputtering method, andthe metal films thus stacked are patterned by performing aphotolithography method and dry etching. Thus, in the pixel P, thesource electrode 21 c and the drain electrode 21 d are formed over thesemiconductor layer 21 b, so that the TFT 21 is formed. Further, in theregion Rb_c, the antistatic wire 15 is formed over the gate insulatingfilm 101.

Then, a film of silicon oxide (SiO₂) is formed as an inorganicinsulating film, for example, by a CVD method. In this way, theinorganic insulating film 102 covering surfaces of the source electrode21 c, the drain electrode 21 d, and the oxide semiconductor layer 21 bin the pixel P and covering a surface of the antistatic wire 15 in theregion Rb_c is formed.

Next, the inorganic insulating film 102 is patterned by performing aphotolithography method and dry etching (see FIG. 6B). Thus, in thepixel P, openings 102 a and 102 b are formed over the drain electrode 21d and the source electrode 21 c, respectively. Further, in the regionRb_c, an opening 102 c is formed over the antistatic wire 15.

Then, the planarizing film 103 composed of a photosensitive acrylicresin is formed over the inorganic insulating film 102, for example, byusing a slit coating method, and portions of the planarizing film 103 inplaces that overlap the openings 102 a to 102 c (see FIG. 6B) of theinorganic insulating film 102 in plan view are removed by using aphotolithography method (see FIG. 6C). Thus, in the pixel P, the contactholes CH1 and CH2 bored through the planarizing film 103 and theinorganic insulating film 102 are formed, and in the region Rb_c, thecontact hole CH3 bored through the planarizing film 103 and theinorganic insulating film 102 is formed.

After that, metal films of titanium (Ti), aluminum (Al), and titanium(Ti) are stacked over the planarizing film 103 in this order, forexample, by a sputtering method. Then, the metal films thus stacked arepatterned by performing a photolithography method and dry etching (seeFIG. 6D). Thus, in the pixel P, the low-level data line 221 b connectedto the source electrode 21 c via the contact hole CH1 and the low-levellower electrode layer 221 a connected to the drain electrode 21 d viathe contact hole CH2 are formed. Further, in the region Rb_c, theantistatic low-level wire 221 c connected to the antistatic wire 15 viathe contact hole CH3 is formed.

Next, an inorganic insulating film composed of silicon nitride (SiN) isformed, for example, by a CVD method (see FIG. 6E). In this way, theinorganic insulating film 104 covering the low-level lower electrode 221a, the low-level data line 221 b, and the antistatic low-level wire 221c is formed over the planarizing film 103 in the pixel P and the regionRb_c.

After that, the inorganic insulating film 104 is patterned by performingphotolithography and dry etching (see FIG. 6F). In this way, openings104 a, 104 b, and 104 c of the inorganic insulating film 104 are formedover the low-level lower electrode 221 a, the low-level data line 221 b,and the antistatic low-level wire 221 c, respectively.

Then, the high-level lower electrode 222, the photoelectric conversionlayer (223 n, 223 i, and 223 p), the upper electrode 224, and theinorganic insulating film 105 are formed (see FIG. 6G). Specifically,the high-level lower electrode 222 is formed by forming a metal filmcomposed of titanium (Ti) over the inorganic insulating film 104, forexample, by a sputtering method and then performing a photolithographymethod and dry etching. After the high-level lower electrode 222 hasbeen formed, the n-type amorphous semiconductor layer 223 n, theintrinsic amorphous semiconductor layer 223 i, and the p-type amorphoussemiconductor layer 223 p are formed in this order as the photoelectricconversion layer, for example, by using a CVD method. The upperelectrode 224 is formed by forming a film of indium tin oxide (ITO) overthe p-type amorphous semiconductor layer 223 p, for example, by asputtering method and then performing a photolithography method and wetetching. After the upper electrode 224 has been formed, thephotoelectric conversion layer (223 n, 223 i, and 223 p) is patterned byperforming a photolithography method and dry etching. In this way, thephotodiode 22 is formed. The inorganic insulating film 105 is formed byforming a film of silicon nitride (SiNx), for example, by using a CVDmethod so as to cover the photodiode 22.

After that, the inorganic insulating film 105 is patterned, for example,by performing a photolithography method and dry etching (see FIG. 6H).Thus, in the pixel P, an opening 105 a of the inorganic insulating film105 is formed over the upper electrode 224, and an opening 105 b boredthrough the inorganic insulating film 105 over the low-level data line221 b is formed, so that a contact hole ch11 composed of the openings104 b and 105 b is formed. Further, in the region Rb_c, an opening 105 cbored through the inorganic insulating film 105 over the antistaticlow-level wire 221 c is formed, so that a contact hole ch31 composed ofthe openings 104 c and 105 c is formed.

Then, the planarizing film 106 composed of a photosensitive acrylicresin is formed over the inorganic insulating film 105, for example, byusing a slit coating method. Portions of the planarizing film 106 inplaces that overlap the opening 105 a and the contact holes ch11 andch31 in FIG. 6H in plan view are removed by using a photolithographymethod (see FIG. 6I). Thus, in the pixel P, a contact hole CH12 and acontact hole CH22 are formed over the low-level data line 221 b and theupper electrode 224, respectively. Further, in the region Rb_c, acontact hole CH23 is formed over the antistatic low-level wire 221 c.

After that, the high-level data line 131 and the bias wire 13 are formedover the planarizing film 106 in the pixel P, and the antistatichigh-level line 132 is formed over the planarizing film 106 in theregion Rb_c (see FIG. 6J). Specifically, after metal films of titanium(Ti), aluminum (Al), and titanium (Ti) have been formed in this orderover the planarizing film 106, for example, by using a sputteringmethod, a photolithography method and dry etching are performed. In thisway, the high-level data line 131, the bias wire 13, and the antistatichigh-level wire 132 are simultaneously formed. The high-level data line131 is connected to the low-level data line 221 b via the contact holeCH12, so that the data line 10 composed of the low-level data line 221 band the high-level data line 131 is formed. The bias wire 13 isconnected to the upper electrode 224 via the contact hole CH22. Further,the antistatic high-level wire 132 is connected to the antistaticlow-level wire 221 c in the contact hole CH23.

Next, the inorganic insulating film 107 and the planarizing film 108 areformed in this order (see FIG. 6K). The inorganic insulating film 107 isformed by forming a film of silicon nitride (SiNx) over the bias wirelayer, for example, by a CVD method and then performing aphotolithography method and dry etching. The planarizing film 108 isformed by forming a film of photosensitive acrylic resin over theinorganic insulating film 107, for example, by a slit coating method andthen removing a portion of the photosensitive acrylic resin by using aphotolithography method. Thus, in the region Rb_c, a contact hole CH33bored through the planarizing film 108 and the inorganic insulating film107 is formed over the antistatic high-level wire 132.

Then, an inorganic insulating film composed of silicon nitride (SiNx) isformed over the planarizing film 108, for example, by a CVD method.Then, the inorganic insulating film is patterned by performing aphotolithography method and dry etching (see FIG. 6L). Thus, in thepixel P, the inorganic insulating film 109 is formed over theplanarizing film 108. Further, in the region Rb_c, the inorganicinsulating film 109 is formed over a portion of the planarizing film 108excluding the contact hole CH33 in FIG. 6K, and an opening 109 a of theinorganic insulating film 109 is formed in such a place as to overlapthe contact hole CH33. As a result, the antistatic hole 14 composed ofthe contact hole CH33 and the opening 109 a is formed, whereby theimaging panel 1 is fabricated.

As mentioned above, the antistatic wire 15 is formed at the same time asthe source electrode 21 c and the drain electrode 21 d of the TFT 21 areformed. The antistatic low-level wire 221 c is formed at the same timeas the low-level lower electrode 221 a and the low-level data line 221b. Further, the antistatic high-level wire 132 is formed at the sametime as the bias wire 13 and the high-level data line 131. In this way,the antistatic wire 15, the antistatic low-level wire 221 c, and theantistatic high-level wire 132 are fabricated in the step of forming theTFT 21 and the bias wire 13 in the pixel P. That is, there is no need toprovide a separate step of fabricating the antistatic wire 15, theantistatic low-level wire 221 c, and the antistatic high-level wire 132,which remove the electric charge of cleaning water that flows into theantistatic hole 14. This makes it possible to, without increasing thenumber of steps of manufacturing the imaging panel 1, prevent a biasedcharge of cleaning water that adheres to the imaging panel 1 and preventincreases in dark current of the photodiodes 261 due to the electriccharge of the cleaning water.

Second Embodiment

A second embodiment illustrates an imaging panel which is different fromthat of the first embodiment in terms of a structure for preventing abiased charge of cleaning water that adheres to the imaging panel. FIG.7 is a schematic plan view of the imaging panel according to the presentembodiment. In FIG. 7, components which are identical to those of thefirst embodiment are given the same reference signs as those of thefirst embodiment. The following describes a structure which is differentfrom that of the first embodiment.

As shown in FIG. 7, the imaging panel 1A includes two protection circuitsections 16 and two protection circuit sections 17. These protectioncircuit sections 16 and 17 are identical to those of the firstembodiment. One of the two protection circuit sections 16 is hereinafterreferred to as “first data protection circuit section 16A”, and theother as “second data protection circuit section 16B”. Further, one ofthe two protection circuit sections 17 is hereinafter referred to as“first gate protection circuit section 17A”, and the other as “secondgate protection circuit section 17B”.

The first data protection circuit section 16A and the second dataprotection section 16B are placed opposite each other across the imagingregion Ra. The first gate protection circuit section 17A and the secondgate protection section 17B are placed opposite each other across theimaging region Ra.

The antistatic wire 15 is disposed along sides of the imaging panel 1Ain a frame region in which the first gate protection circuit section 17Aand the second gate protection circuit section 17B are provided, and areconnected to the first data protection circuit section 16A and thesecond data protection section 16B.

As is the case with the protection circuit section 16 according to thefirst embodiment, the first data protection circuit section 16A and thesecond data protection section 16B each include a data terminal 161 anda non-linear element 162 for each of the data lines 10 (see FIG. 3). Asis the case with the gate protection circuit section 17 according to thefirst embodiment, the first gate protection circuit section 17A and thesecond gate protection circuit section 17B each include a gate terminal171 and a non-linear element 172 for each of the gate lines (see FIG.3).

In the process of manufacturing the imaging panel 1A, as in the case ofthe first embodiment, operation of the imaging panel 1A is checked byapplying predetermined voltages to the data lines 10 and the gate lines11 via the data terminals 161 of the first data protection circuitsection 16A and the gate terminals 171 of the first gate protectioncircuit section 17A, respectively. The second data protection circuitsection 16B and the second gate protection circuit section 17B are usedas spare protection circuit sections for the first data protectioncircuit section 16A and the first gate protection circuit section 17A,respectively.

Next, a step of cleaning the imaging panel 1A is described. In thisexample, the imaging panel 1A is conveyed so that a side of the frameregion along which the first data protection circuit section 16A isprovided passes through air knives 216 (see FIG. 4) first. In this way,when the imaging panel 1A passes through the air knives 216, cleaningwater is pushed out to a side of the frame region along which the seconddata protection circuit section 16B is provided. A configuration of thesecond data protection circuit section 16B is described here in concreteterms.

FIG. 8A is a plan view showing a portion of the second data protectioncircuit section 16B. More specifically, FIG. 8A is a plan viewschematically showing a data terminal 161 connected to a data line 10and a non-linear element 162 connected to the data terminal 161.Further, FIG. 8B is a schematic cross-sectional view taken along lineVIIIB-VIIIB shown in FIG. 8A. In FIGS. 8A and 8B, components which arethe same as those of the first embodiment are given the same referencesigns as those of the first embodiment.

As shown in FIG. 8A, the data terminal 161 is connected to the data line10 and the non-linear element 162 by a wire 180.

In this example, the non-linear element 162 is constituted, for example,by an n-type TFT. As shown in FIG. 8B, a gate electrode 162 a of thenon-linear element 162 is provided over the substrate 100, and asemiconductor layer 162 b is provided over the gate electrode 162 a viathe gate insulating film 101. A source electrode 162 c and a drainelectrode 162 d placed at a spacing from each other are provided overthe semiconductor layer 162 b. An opening 101 a of the gate insulatingfilm 101 is formed over the gate electrode 162 a, and the drainelectrode 162 d and the gate electrode 162 a are connected to each otherin the opening 101 a. The non-linear element 162 is fabricated at thesame time in the process of fabricating the TFT 21.

The wire 180 and the antistatic wire 15 are constituted by the samematerial as the source electrode 162 c and the drain electrode 162 d.The source electrode 162 c of the non-linear element 162 and the wire180 are integrally formed, and the drain electrode 162 d of thenon-linear element 162 and the antistatic wire 15 are integrally formed.

The data terminal 161 includes a first data terminal layer 161 a and asecond data terminal layer 161 b. The first data terminal layer 161 a isconnected to the wire 180 in the opening 102 a of the inorganicinsulating film 102. The inorganic insulating films 104 and 105 areformed over portions of the first data terminal layer 161 a, and anopening ch15 bored through the inorganic insulating films 104 and 105 isformed inside the opening 102 a. The second data terminal layer 161 b isformed over the inorganic insulating film 105 so as to be connected tothe first data terminal layer 161 a in the opening ch15. A opening ch16bored through the inorganic insulating films 108 and 109 is formed overthe second data terminal layer 161 b, and the data terminal 161 has asurface exposed in the opening ch16.

In this example, the first data terminal layer 161 a is constituted bythe same material as the low-level lower electrode 221 a, and the seconddata terminal layer 161 b is constituted by the same material as thebias wire 13.

Further, the low-level data line 221 b is formed in such a place overthe wire 180 as not to overlap the data terminal 161 in plan view. Thelow-level data line 221 b is connected to the wire 180 via a contacthole CH13 bored through the inorganic insulating film 102 and theplanarizing film 103.

A contact hole CH14 bored through the planarizing film 106 and theinorganic insulating films 105 and 104 is formed in such a place as tooverlap the low-level data line 221 b in plan view. The high-level dataline 131 is connected to the low-level data line 221 b via the contacthole CH14.

The imaging panel 1A is cleaned in a manner similar to the firstembodiment. When negatively-charged cleaning water touches the surfaceof the data terminal 161 of the second data protection circuit section16B, the electric charge of the cleaning water diffuses into theantistatic wire 15 via the non-linear element 162. The antistatic wire15 is set to a ground potential after the step of cleaning the imagingpanel 1A. In this way, the antistatic wire 15, which has been charged bythe electric charge of the cleaning water, is subjected to staticremoval. As a result, the electric charge of the cleaning water is notbiased toward pixels around the second data protection circuit section16B, and increases in dark current of the photodiodes 261 can beprevented.

Third Embodiment

A third embodiment illustrates an imaging panel which is different fromthose of the first and second embodiments in terms of a structure forpreventing a biased charge of cleaning water.

FIG. 9 is a schematic plan view of an imaging panel according to thepresent embodiment. As shown in FIG. 9, the imaging panel 1B includes aplurality of antistatic connecting wires 15 a and 15 b, a plurality ofantistatic circuit sections 26 (26 a to 26 d), and four antistatic holes(14 a to 14 d) provided in the four corners, respectively, of theimaging panel 1B.

Each of the antistatic holes 14 (14 a to 14 d) overlaps an antistaticconnecting wire 15 a and an antistatic connecting wire 15 b that areprovided along two sides constituting the corner in which thatantistatic hole 14 is provided.

The antistatic circuit sections 26 (26 a to 26 d) are disposed along thesides, respectively, of the imaging panel 1B. The antistatic circuitsections 26 a to 26 d each include a plurality of photodiodes(hereinafter referred to as “antistatic photodiodes) 261. In thefollowing, when a distinction is made among the antistatic photodiodes261 of the antistatic circuit sections 26 a to 26 d, the antistaticphotodiodes 261 are referred to as “antistatic photodiodes 261 a to 261d”.

In this example, two antistatic connecting wires 15 a (15 a_1 and 15a_2) overlapping different antistatic holes 14 in plan view or twoantistatic connecting wires 15 b (15 b_1 and 15 b_2) overlappingdifferent antistatic holes 14 in plan view are independently providedalong a side of the frame region Rb. Specifically, for example, anantistatic connecting wire 15 a_1 overlapping the antistatic hole 14 cin plan view and an antistatic connecting wire 15 a_2 overlapping theantistatic hole 14 a in plan view are provided along the side alongwhich the antistatic circuit section 26 a is provided. Further, anantistatic connecting wire 15 b_1 overlapping the antistatic hole 14 cin plan view and an antistatic connecting wire 15 b_2 overlapping theantistatic hole 14 d in plan view are provided along the side alongwhich the antistatic circuit section 26 c is provided. An antistaticconnecting wire 15 a_1 overlapping the antistatic hole 14 b in plan viewand an antistatic connecting wire 15 a_2 overlapping the antistatic hole14 d in plan view are provided along the side along which the antistaticcircuit section 26 d is provided. Further, an antistatic connecting wire15 a_1 overlapping the antistatic hole 14 a in plan view and anantistatic connecting wire 15 a_2 overlapping the antistatic hole 14 bin plan view are provided along the side along which the antistaticcircuit section 26 b is provided.

The antistatic photodiodes 261 are each connected to either anantistatic connecting wire 15 a or 15 b. For example, the antistaticphotodiodes 261 in the antistatic circuit sections 26 a and 26 d areeach connected to either an antistatic connecting wire 15 a_1 or 15 a_2.Further, the antistatic photodiodes 261 in the antistatic circuitsections 26 b and 26 c are each connected to either an antistaticconnecting wire 15 b_1 or 15 b_2.

Of the antistatic photodiodes 261 a to 261 d, the antistatic photodiodes261 connected to the antistatic connecting wires 15 a_1 are referred toas “antistatic photodiodes 261 a_1, 261 b_1, 261 c_1, and 261 d_1”, andthe antistatic photodiodes 261 connected to the antistatic connectingwires 15 a_2 are referred to as “antistatic photodiodes 261 a_2, 261b_2, 261 c_2, and 261 d_2”.

The photodiodes 261 are the same in structure as the photodiodes 22(see, for example, FIG. 5), and are fabricated at the same time as thestep in which the photodiodes 22 are fabricated. The following describesconnections between the antistatic wires 15 a or 15 b and the antistaticphotodiodes 261 in concrete terms.

FIG. 10A illustrates schematic cross-sectional views taken along lineA-A, line B-B, and line C-C, respectively, shown in FIG. 9. In FIG. 10A,components which are the same as those of the first embodiment are giventhe same reference signs as those of the first embodiment. Although thefollowing description is given by taking, as an example, structures ofthe antistatic hole 14 c and the antistatic circuit sections 26 a and 26c, the other antistatic holes have the same structure as the antistatichole 14 c. Further, the antistatic circuit section 26 b has the sameconfiguration as the antistatic circuit section 26 c, and the antistaticcircuit section 26 d has the same configuration as the antistaticcircuit section 26 a.

As shown in FIG. 10A, the antistatic photodiodes 261 a_1 and 261 a_2 inthe antistatic circuit section 26 a have their low-level lowerelectrodes 221 a (cathodes) connected to the antistatic connecting wires15 a_1 and 15 a_2, respectively. The antistatic photodiodes 261 c_1 and261 c_2 in the antistatic circuit section 26 c have their upperelectrodes 224 (anodes) connected to the antistatic connecting wires 15b_1 and 15 b_2, respectively.

The antistatic connecting wires 15 b_1 and 15 b_2 are constituted by thesame material as the bias wire 13, and the antistatic connecting wires15 b_1 and 15 b_2 are formed integrally with the antistatic high-levelwire 132. Further, the antistatic connecting wires 15 a_1 and 15 b_2 areconstituted by the same material as the source electrode 21 c and thedrain electrode 21 d, and are fabricated at the same time in the step inwhich the source electrode 21 c and the drain electrode 21 d arefabricated.

That is, the antistatic photodiodes 261 of the antistatic circuitsections 26 a and 26 d of the antistatic circuit sections 26 a to 26 dshown in FIG. 9 have their cathodes connected to the antistaticconnecting wires 15 a (15 a_1 and 15 a_2). Further, the antistaticphotodiodes 261 of the antistatic circuit sections 26 b and 26 c havetheir anodes connected to the antistatic connecting wires 15 b (15 b_1and 15 b_2).

In FIG. 10A, when positively-charged cleaning water flows into theantistatic hole 14 c, the electric charge of the cleaning water iscanceled out by electrons from the n-type amorphous semiconductor layers223 n of the antistatic photodiodes 261 a_1 via the antistatichigh-level wire 132, the antistatic low-level wire 221 c, and theantistatic wire 15 a_1. Further, when negatively-charged cleaning waterflows into the antistatic holes 14 c, the electric charge of thecleaning water diffuses into the p-type amorphous semiconductor layers223 p of the antistatic photodiodes 261 c_1 via the antistaticconnecting wires 15 b.

In the present embodiment, since the antistatic holes 14 a to 14 d areprovided in the four corners, respectively, of the imaging panel 1B, thecleaning water flows in any antistatic hole regardless of the directionin which the imaging panel 1B faces when the imaging panel 1B passesthrough the air knives 216. Further, no matter whetherpositively-charged or negatively-charged cleaning water flows in anyantistatic hole, the electric charge of the cleaning water can beremoved by the antistatic photodiodes 261 via either an antistaticconnecting wire 15 a or 15 b overlapping the antistatic hole in planview. Therefore, the electric charge of the cleaning water is not biasedtoward a corner of the imaging panel 1B, and increases in dark currentof the photodiodes 22 within the pixels can be prevented.

The configuration of the antistatic circuit sections 26 is not limitedto that of the third embodiment. An antistatic hole 14 needs only beprovided in at least one corner of the imaging panel 1B. Further, alongtwo sides constituting a corner in which one antistatic hole 14 isprovided, one antistatic connecting wire 15 a and one antistaticconnecting wire 15 b need only be provided, and an antistatic photodiode261 whose cathode is connected to the antistatic connecting wire 15 aand an antistatic photodiode 261 whose anode is connected to theantistatic connecting wire 15 b need only be provided.

In the example shown in FIG. 9, one antistatic circuit section 26 mayinclude two antistatic photodiodes 261 connected to two antistaticconnecting wires 15 a_1 and 15 a_2 differing from each other or twoantistatic connecting wires 15 b_1 and 15 b_2 differing from each other,respectively. Specifically, for example, as shown in FIG. 10B, theantistatic photodiodes 261 a_1 and 261 a_2 may have their upperelectrodes 224 connected to each other via a relay wire 133. Further, asshown in FIG. 10B, the antistatic photodiodes 261 c_1 and 261 c_2 mayhave their low-level lower electrodes 221 a connected to each other viaa relay wire 151. The relay wire 133 may be formed by the same materialas the bias wire 13, and the relay wire 151 may be formed by the samematerial as the source electrode 21 c and the drain electrode 21 d.

While embodiments of the present disclosure have been described above,the aforementioned embodiments are merely examples for carrying out thepresent disclosure. Therefore, the present disclosure is not limited tothe aforementioned embodiments but can be carried out with appropriatemodifications to the aforementioned embodiments without departing fromthe scope of the present disclosure. The following describesmodifications of the present disclosure.

(1) Although the first embodiment has illustrated an example in whichonly one antistatic hole 14 is provided in a corner of the imaging panel1, this is not intended to limit the number of antistatic holes 14. Asshown in FIG. 11A (plan view), antistatic holes 14 may be provided intwo adjacent corners over the imaging panel 1, or as shown in FIG. 11B,antistatic holes 14 may be provided in all corners over the imagingpanel 1. Even in this case, as in the case of the first embodiment, anantistatic low-level wire 221 c and an antistatic high-level wire 132are stacked so as to overlap each antistatic hole 14 in plan view, sothat the antistatic wire 221 c and an antistatic connecting wire 15 areconnected to each other. Providing a plurality of antistatic holes 14makes it easier to adjust the position in which the imaging panel isconveyed and makes it harder for the electric charge of the cleaningwater to be biased onto the imaging panel than providing one antistatichole 14.

(2) In the second embodiment, for example, as shown in FIG. 12, as inthe case of the first embodiment, the antistatic hole 14, the antistatichigh-level wire 132, and the antistatic low-level wire 221 c may beprovided in such a place as to overlap the antistatic wire 15 in planview. This configuration further reduces a biased charge of the cleaningwater over the imaging panel.

(3) The first and second embodiments have illustrated an example inwhich the antistatic wire 15 is set to a ground potential. Setting theantistatic wire 15 to a ground potential makes it possible to morecertainly remove the electric charge of the antistatic wire 15 chargedby the electric charge of the cleaning water. However, even in a statewhere the antistatic wire 15 is not set to a ground potential, theelectric charge of the cleaning water is diffused into the antistaticwire 15 or canceled out by electrons from the antistatic wire 15. As aresult, the electric charge of the cleaning water is hardly biased ontothe imaging panel, and increases in dark current of the photodiodes 261are prevented to some extent. Therefore, in each of the aforementionedimaging panels 1 and 1A, the antistatic wire 15 does not need to be setto a ground potential.

(4) In the second embodiment, in a case where negatively-chargedcleaning water touches a data terminal 161, the electric charge of thecleaning water can be removed; however, in a case wherepositively-charged cleaning water touches a data terminal 161, thenon-linear element 162 becomes inversely biased, so that static removalcannot be performed. For removing the electric charge of cleaning watertouching a data terminal 161, regardless of whether the cleaning wateris positively or negatively charged, it is preferable that, as shown inFIG. 13, non-linear elements 1621 and 1622 be connected parallel butoriented in opposite directions to each other between the data terminal161 and the antistatic wire 15. With this configuration, in a case wherepositively-charged cleaning water has touched the data terminal 161, theelectric charge of the cleaning water is canceled out by electrons fromthe antistatic wire 15 via the non-linear element 1622. Further, in acase where negatively-charged cleaning water has touched the dataterminal 161, the electric charge of the cleaning water diffuses intothe antistatic wire 15 via the non-linear element 1621.

Further, as shown in FIG. 13, non-linear elements 1721 and 1722 may beconnected parallel but oriented in opposite directions to each otherbetween each gate terminal 171 and the antistatic wire 15. With thisconfiguration, in a case where positive static electricity has entered agate line 11, the static electricity is canceled out by electrons fromthe antistatic wire 15 via the non-linear element 1721, and in a casewhere negative static electricity has entered a gate line 11, the staticelectricity can be dissipated into the antistatic wire 15 via thenon-linear element 1722.

(5) The second embodiment has illustrated an example in which the dataterminals 161 of the first and second data protection circuit sections16A and 16B are connected to the respective non-linear elements 162 andthe non-linear elements 162 are connected to the antistatic wire 15.However, at least either the first data protection circuit section 16Aor the second data protection circuit section 16B does not need toinclude non-linear elements 162 and may have its data terminals 161connected directly to the antistatic wire 15.

(6) In the first embodiment, the place in which the antistatic hole 14is provided is not limited to a corner of the imaging panel 1. Theantistatic hole 14 needs only be provided in the frame region of theimaging panel 1.

An active matrix substrate that is applied to the aforementioned imagingpanel can be described as follows.

In a first configuration, there is provided an active matrix substrateincluding: a substrate; a pixel region including a plurality of pixelsformed over the substrate; a plurality of photoelectric conversionelements provided in the plurality of pixels; an antistatic wireprovided in a frame region outside the pixel region so as to surroundthe pixel region; an insulating film covering a portion of the frameregion and the pixel region; and an antistatic hole bored through theinsulating film in the frame region, wherein the antistatic wire has asurface exposed in the antistatic hole.

According to the first configuration, the photoelectric conversionelements are provided separately in each of the pixels of the pixelregion, and the antistatic hole and the antistatic wire are provided inthe frame region. A portion of the frame region and the pixel region arecovered with the insulating film. The antistatic hole is bored throughthe insulating film, and the surface of the antistatic wire is exposedin the antistatic hole. When the active matrix substrate is cleaned in acharged state in the process of manufacturing the active matrixsubstrate, the cleaning water having touched the active matrix substratebecomes charged. In a case where the cleaning water is negativelycharged, the flow of the cleaning water into the antistatic hole causesthe electric charge of the cleaning water to diffuse into the antistaticwire. Further, in a case where the cleaning water is positively charged,the electric charge of the cleaning water is canceled out by electronsfrom the antistatic wire. Therefore, the electric charge of the cleaningwater is not biased toward pixels around the antistatic hole, andincreases in dark current of the photoelectric conversion elements canbe prevented.

In the first configuration, the antistatic wire may include a firstwiring layer surrounding the pixel region and a second wiring layeroverlapped with the antistatic hole in plan view and connected to thefirst wiring layer, and the second wiring layer may have a surfaceexposed in the antistatic hole (second configuration).

According to the second configuration, in a case where the cleaningwater having touched the second wiring layer is negatively charged, theelectric charge of the cleaning water diffuses into the first wiringlayer provided around the pixel region, and in a case where the cleaningwater is positively charged, the electric charge of the cleaning wateris canceled out by electrons from the first wiring layer.

In the first or second configuration, the active matrix substrate mayfurther include a plurality of data lines and a plurality of dataterminals connected to first ends of the plurality of data lines,respectively, and the plurality of data terminals may be connected tothe antistatic wire (third configuration).

According to the third configuration, when the active matrix substratehas been cleaned, the cleaning water flows in the antistatic hole andover the data terminals. In a case where the cleaning water isnegatively charged, the electric charge diffuses into the antistaticwire from the data terminal and the antistatic hole. In a case where thecleaning water is positively charged, the electric charge of thecleaning water in the antistatic hole and over the data terminals iscanceled out by electrons from the antistatic wire. Therefore, theelectric charge of the cleaning water is hardly biased onto the activematrix substrate, and increases in dark current of the photoelectricconversion elements can be prevented.

In any of the first to third configurations, the antistatic hole may beprovided in at least one corner over the substrate in the frame region(fourth configuration).

According to the fourth configuration, in a case where the cleaningwater easily accumulates in a corner over the active matrix substrate,the electric charge of the cleaning water is hardly biased toward pixelsaround the corner over the active matrix substrate, and increases indark current of the photoelectric conversion elements in those pixelscan be prevented.

In the first configuration, the active matrix substrate may furtherinclude a first antistatic wire provided along a first side of two sidesconstituting a corner in which the antistatic hole is provided, a secondantistatic wire provided along a second side of the two sides, a firstantistatic photoelectric conversion element, provided along the firstside in the frame region, that has an anode connected to the firstantistatic wire, and a second antistatic photoelectric conversionelement, provided along the second side in the frame region, that has acathode connected to the second antistatic wire, the first antistaticwire may have a surface exposed in the antistatic hole, and the secondantistatic wire may be electrically connected to the first antistaticwire in the antistatic hole (fifth configuration).

According to the fifth configuration, the first antistatic wire and thesecond antistatic wire are provided along the two sides, respectively,constituting the corner in which the antistatic hole in the frameregion. The first antistatic photoelectric conversion element isprovided along the side along which the first antistatic wire isprovided in the frame region, and has its anode connected to the firstantistatic wire. Moreover, the second antistatic photoelectricconversion element is provided along the side along which the secondantistatic wire is provided in the frame region, and has its cathodeconnected to the second antistatic wire. The surface of the firstantistatic wire is exposed in the antistatic hole, and the secondantistatic wire is electrically connected to the first antistatic wire.Therefore, in the step of cleaning the active matrix substrate, in acase where positively-charged cleaning water has flowed in theantistatic hole, the electric charge of the cleaning water is canceledout by electrons from the cathode of the second antistatic photoelectricconversion element via the first antistatic wire and the secondantistatic wire. Further, in a case where negatively-charged cleaningwater has flown in the antistatic hole, the electric charge of thecleaning water diffuses into the anode of the first antistaticphotoelectric conversion element via the first antistatic wire. As aresult, the electric charge of the cleaning water is not biased towardat least one corner over the active matrix substrate, and increases indark current of the photoelectric conversion elements in pixels aroundthe corner can be prevented.

In the fifth configuration, a plurality of the first antistaticphotoelectric conversion elements and a plurality of the second firstantistatic photoelectric conversion elements may be provided (sixthconfiguration).

As compared with a case where one first antistatic photoelectricconversion element and one second antistatic photoelectric conversionelement are provided, the sixth configuration enhances the capability ofremoving the electric charge of charged cleaning water, and cantherefore further reduce a biased charge of the cleaning water over theactive matrix substrate.

In a seventh configuration, an active matrix substrate includes asubstrate, a pixel region including a plurality of pixels formed overthe substrate, a plurality of photoelectric conversion elements providedin the plurality of pixels, a plurality of data lines formed over thesubstrate, a plurality of first terminals connected to first ends of theplurality of data lines, respectively, in a frame region outside thepixel region, an antistatic wire provided in the frame region so as tosurround the pixel region and electrically connected to the plurality offirst terminals, and a plurality of protection elements connectedbetween respective ones of the plurality of first terminals and theantistatic wire, and each of the plurality of protection elementsincludes a first non-linear element connected between a first terminaland the antistatic wire.

According to the seventh configuration, the photoelectric conversionelements are provided separately in each of the pixels of the pixelregion formed over the substrate, and the plurality of data lines areprovided over the substrate. In the frame region, the plurality of firstterminals connected to the first ends of the plurality of data lines,the antistatic wire surrounding the pixel region, and the firstnon-linear elements connected between the antistatic wire and the firstterminals are provided. Therefore, in a case where cleaning water havingtouched the active matrix substrate becomes charged in cleaning theactive matrix substrate, the cleaning water charged to either a positiveor negative polarity touches the first terminals. In this case, theelectric charge of the cleaning water is canceled out by electrons fromthe antistatic wire via the first non-linear elements, or the electriccharge of the cleaning water can diffuse into the antistatic wire viathe first non-linear elements. Therefore, in a case where the cleaningwater easily accumulates in the region in which the first terminals areprovided, the electric charge of the cleaning water is not biased towardthe region, and increases in dark current of the photoelectricconversion elements in pixels around the region can be prevented.

In the seventh configuration, each of the plurality of protectionelements may include, between a first terminal and the antistatic wire,a second non-linear element connected parallel but oriented in anopposite direction to the first non-linear element (eighthconfiguration).

According to the eighth configuration, the electric charge of thecleaning water, depending on the polarity of the electric charge, iscanceled out by electrons from the antistatic wire via either of thefirst non-linear element and the second non-linear element and diffusedinto the antistatic wire via the other of the first non-linear elementand the second non-linear element. Therefore, as compared with a casewhere only the first non-linear element is provided, a dark current ofthe photoelectric conversion element that increases due to the influenceof the electric charge of the cleaning water can be further reduced.

In the seventh or eighth configuration, the active matrix substrate mayfurther include a plurality of second terminals connected to second endsof the plurality of data lines, respectively, in the frame region, andthe plurality of second terminals may be connected to the antistaticwire in the frame region (ninth configuration).

According to the ninth configuration, the second terminals are connectedto the second ends of the data lines, and the second terminals and theantistatic wire are connected to each other. Therefore, even in a casewhere charged cleaning water has touched the second terminals, theelectric charge of the cleaning water is removed by the antistatic wire,as in the case of the first terminals. As compared in a case where onlythe first terminals are provided, this enhances the capability ofremoving the electric charge of the cleaning water, and can furtherreduce a biased charge of the cleaning water over the active matrixsubstrate.

A method for inspecting an active matrix substrate is a method forinspecting an active matrix substrate including a pixel region includinga plurality of pixels defined by a plurality of data lines and aplurality of gate lines both formed over a substrate, a plurality ofphotoelectric conversion elements provided in the plurality of pixelsand connected to the plurality of data lines, an antistatic wireprovided in a frame region outside the pixel region so as to surroundthe pixel region, an insulating film covering a portion of the frameregion and the pixel region, and an antistatic hole bored through theinsulating film in the frame region, the antistatic wire having asurface exposed in the antistatic hole, the method including: settingthe antistatic wire to a predetermined reference potential; and scanningthe plurality of gate lines and acquiring data signals from theplurality of data lines (tenth configuration).

According to the tenth configuration, in the active matrix substrate inwhich the photoelectric conversion elements are provided separately ineach of the pixels of the pixel region and the antistatic hole and theantistatic wire are provided in the frame region, the pixel region and aportion of the frame region are covered with the insulating film. Theantistatic hole is bored through the insulating film, and the surface ofthe antistatic wire is exposed in the antistatic hole. In a case where asurface of the active matrix substrate is cleaned before the step ofinspecting the active matrix substrate, cleaning the active matrixsubstrate in a charged state charges cleaning water having touched theactive matrix substrate. When the charged cleaning water flows in theantistatic hole, the antistatic wire becomes charged by the electriccharge of the cleaning water. After the cleaning process, the electriccharge of the antistatic wire thus charged is removed by setting theantistatic wire to a predetermined reference potential. Therefore, darkcurrents of the photoelectric conversion elements in the active matrixsubstrate hardly increase due to the electric charge of the cleaningwater, and appropriate data signals can be obtained from the pluralityof data lines.

The present disclosure contains subject matter related to that disclosedin U.S. Provisional Patent Application No. 62/871,633 filed in theUnited States Patent Office on Jul. 8, 2019, the entire contents ofwhich are hereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. An active matrix substrate comprising: asubstrate; a pixel region including a plurality of pixels formed overthe substrate; a plurality of photoelectric conversion elements providedin the plurality of pixels; an antistatic wire provided in a frameregion outside the pixel region so as to surround the pixel region; aninsulating film covering a portion of the frame region and the pixelregion; and an antistatic hole bored through the insulating film in theframe region, wherein the antistatic wire has a surface exposed in theantistatic hole.
 2. The active matrix substrate according to claim 1,wherein the antistatic wire includes a first wiring layer surroundingthe pixel region and a second wiring layer overlapped with theantistatic hole in plan view and connected to the first wiring layer,and the second wiring layer has a surface exposed in the antistatichole.
 3. The active matrix substrate according to claim 1, furthercomprising: a plurality of data lines; and a plurality of data terminalsconnected to first ends of the plurality of data lines, respectively,wherein the plurality of data terminals are connected to the antistaticwire.
 4. The active matrix substrate according to claim 1, wherein theantistatic hole is provided in at least one corner over the substrate inthe frame region.
 5. The active matrix substrate according to claim 4,further comprising: a first antistatic wire provided along a first sideof two sides constituting a corner in which the antistatic hole isprovided; a second antistatic wire provided along a second side of thetwo sides; a first antistatic photoelectric conversion element, providedalong the first side in the frame region, that has an anode connected tothe first antistatic wire; and a second antistatic photoelectricconversion element, provided along the second side in the frame region,that has a cathode connected to the second antistatic wire, wherein thefirst antistatic wire has a surface exposed in the antistatic hole, andthe second antistatic wire is electrically connected to the firstantistatic wire in the antistatic hole.
 6. The active matrix substrateaccording to claim 5, wherein a plurality of the first antistaticphotoelectric conversion elements and a plurality of the second firstantistatic photoelectric conversion elements are provided.
 7. An activematrix substrate comprising: a substrate; a pixel region including aplurality of pixels formed over the substrate; a plurality ofphotoelectric conversion elements provided in the plurality of pixels; aplurality of data lines formed over the substrate; a plurality of firstterminals connected to first ends of the plurality of data lines,respectively, in a frame region outside the pixel region; an antistaticwire provided in the frame region so as to surround the pixel region andelectrically connected to the plurality of first terminals; and aplurality of protection elements connected between respective ones ofthe plurality of first terminals and the antistatic wire, wherein eachof the plurality of protection elements includes a first non-linearelement connected between a first terminal and the antistatic wire. 8.The active matrix substrate according to claim 7, wherein each of theplurality of protection elements includes, between a first terminal andthe antistatic wire, a second non-linear element connected parallel butoriented in an opposite direction to the first non-linear element. 9.The active matrix substrate according to claim 7, further comprising aplurality of second terminals connected to second ends of the pluralityof data lines, respectively, in the frame region, wherein the pluralityof second terminals are connected to the antistatic wire in the frameregion.
 10. A method for inspecting an active matrix substrate includinga pixel region including a plurality of pixels defined by a plurality ofdata lines and a plurality of gate lines both formed over a substrate, aplurality of photoelectric conversion elements provided in the pluralityof pixels and connected to the plurality of data lines, an antistaticwire provided in a frame region outside the pixel region so as tosurround the pixel region, an insulating film covering a portion of theframe region and the pixel region, and an antistatic hole bored throughthe insulating film in the frame region, the antistatic wire having asurface exposed in the antistatic hole, the method comprising: settingthe antistatic wire to a predetermined reference potential; and scanningthe plurality of gate lines and acquiring data signals from theplurality of data lines.